IRFHM8363TR2PBF - MOSFET 2N-CH 30V 11A 8PQFN

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MOSFET 2N-CH 30V 11A 8PQFN
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
28035 Pieces
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRFHM8363TR2PBF nan stock pou vann.
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FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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Espesifikasyon pou IRFHM8363TR2PBF

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : IRFHM8363TR2PBF
Fabricant : Infineon Technologies
Deskripsyon : MOSFET 2N-CH 30V 11A 8PQFN
Seri : HEXFET®
Estati Pati : Obsolete
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11A
RD sou (Max) @ Id, Vgs : 14.9 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.35V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 1165pF @ 10V
Pouvwa - Max : 2.7W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-PowerVDFN
Pake Aparèy Founisè : 8-PQFN (3.3x3.3), Power33
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : IRFHM , IRFHM83

dokiman pou IRFHM8363TR2PBF

pwodwi ki gen rapò pou IRFHM8363TR2PBF Infineon Technologies

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