NCP81075DR2G - HIGH PERFORMANCE DUAL MOS

Fabricant Nimewo Pati

NCP81075DR2G

Entèn Nimewo Pati

AX-NCP81075DR2G

Fabricant

ON Semiconductor

Kout Deskripsyon

HIGH PERFORMANCE DUAL MOS

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

493740 Pieces

referans pri

~~USD 0.6318~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen NCP81075DR2G nan stock pou vann.

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Espesifikasyon pou NCP81075DR2G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NCP81075DR2G

Fabricant : ON Semiconductor

Deskripsyon : HIGH PERFORMANCE DUAL MOS

Seri : -

Estati Pati : Active

Kondwi konte genyen : High-Side or Low-Side

Kalite Chèn : Independent

Kantite Chofè yo : 2

Kalite Gate : N-Channel MOSFET

Voltage - Pwovizyon pou : 8.5V ~ 20V

Vòltaj lojik - VIL, VIH : 0.8V, 2.7V

Kouran - Peak Sòti (Sous, Lavabo) : 4A, 4A

Kalite Antre : Non-Inverting

Segondè Voltage Side - Max (Bootstrap) : 200V

Rise / Fall Time (Tip) : 8ns, 7ns

Operating Tanperati : -40°C ~ 140°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pake Aparèy Founisè : 8-SOIC

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NCP8 , NCP810

dokiman pou NCP81075DR2G

Fich : NCP81075DR2G.pdf

pwodwi ki gen rapò pou NCP81075DR2G ON Semiconductor

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