NVB6412ANT4G - MOSFET N-CH 100V 59A D2PAK

Fabricant Nimewo Pati

NVB6412ANT4G

Entèn Nimewo Pati

AX-NVB6412ANT4G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 100V 59A D2PAK

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Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

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Espesifikasyon pou NVB6412ANT4G

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Nimewo pati : NVB6412ANT4G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 100V 59A D2PAK

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 58A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 18.2 mOhm @ 58A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 100nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 3500pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 167W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D2PAK-3

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NVB6 , NVB641

dokiman pou NVB6412ANT4G

Fich : NVB6412ANT4G.pdf

pwodwi ki gen rapò pou NVB6412ANT4G ON Semiconductor

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