BAL99E6327HTSA1 - DIODE GEN PURP 80V 250MA SOT23-3

Fabricant Nimewo Pati

BAL99E6327HTSA1

Entèn Nimewo Pati

AX-BAL99E6327HTSA1

Fabricant

Infineon Technologies

Kout Deskripsyon

DIODE GEN PURP 80V 250MA SOT23-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

20138120 Pieces

referans pri

~~USD 0.013932~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BAL99E6327HTSA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou BAL99E6327HTSA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BAL99E6327HTSA1

Fabricant : Infineon Technologies

Deskripsyon : DIODE GEN PURP 80V 250MA SOT23-3

Seri : -

Estati Pati : Last Time Buy

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 80V

Kouran - Mwayèn Rèktifye (Io) : 250mA (DC)

Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 150mA

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 4ns

Kouran - Fèy Reverse @ Vr : 1µA @ 70V

Kapasite @ Vr, F : 1.5pF @ 0V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : TO-236-3, SC-59, SOT-23-3

Pake Aparèy Founisè : SOT-23-3

Operating Tanperati - Junction : -65°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BAL99 , BAL99E6

dokiman pou BAL99E6327HTSA1

Fich : BAL99E6327HTSA1.pdf

pwodwi ki gen rapò pou BAL99E6327HTSA1 Infineon Technologies

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