2SK3906(Q) - MOSFET N-CH 600V 20A TO-3PN

Fabricant Nimewo Pati

2SK3906(Q)

Entèn Nimewo Pati

AX-2SK3906(Q)

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N-CH 600V 20A TO-3PN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

8016 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen 2SK3906(Q) nan stock pou vann.

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Espesifikasyon pou 2SK3906(Q)

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : 2SK3906(Q)

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N-CH 600V 20A TO-3PN

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 20A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 330 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 60nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 4250pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 150W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-3P(N)

Pake / Ka : TO-3P-3, SC-65-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : 2SK , 2SK39

dokiman pou 2SK3906(Q)

Fich : 2SK3906(Q).pdf

pwodwi ki gen rapò pou 2SK3906(Q) Toshiba Semiconductor and Storage

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