GP1M009A020FG - MOSFET N-CH 200V 9A TO220F

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MOSFET N-CH 200V 9A TO220F
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
21136 Pieces
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen GP1M009A020FG nan stock pou vann.
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Espesifikasyon pou GP1M009A020FG

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : GP1M009A020FG
Fabricant : Global Power Technologies Group
Deskripsyon : MOSFET N-CH 200V 9A TO220F
Seri : -
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 400 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 8.6nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 414pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 17.3W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220F
Pake / Ka : TO-220-3 Full Pack
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : GP1M , GP1M00

dokiman pou GP1M009A020FG

pwodwi ki gen rapò pou GP1M009A020FG Global Power Technologies Group

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