BSP299L6327HUSA1 - MOSFET N-CH 500V 400MA SOT-223

Fabricant Nimewo Pati

BSP299L6327HUSA1

Entèn Nimewo Pati

AX-BSP299L6327HUSA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 500V 400MA SOT-223

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

66830 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BSP299L6327HUSA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou BSP299L6327HUSA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BSP299L6327HUSA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 500V 400MA SOT-223

Seri : SIPMOS®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 500V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 400mA (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 4 Ohm @ 400mA, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 400pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.8W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-SOT223-4

Pake / Ka : TO-261-4, TO-261AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BSP29 , BSP299L6

dokiman pou BSP299L6327HUSA1

Fich : BSP299L6327HUSA1.pdf

pwodwi ki gen rapò pou BSP299L6327HUSA1 Infineon Technologies

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