NSB8BTHE3_A/I - DIODE GEN PURP 100V 8A TO263AB

Fabricant Nimewo Pati

NSB8BTHE3_A/I

Entèn Nimewo Pati

AX-NSB8BTHE3_A/I

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURP 100V 8A TO263AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

522690 Pieces

referans pri

~~USD 0.53676~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen NSB8BTHE3_A/I nan stock pou vann.

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Espesifikasyon pou NSB8BTHE3_A/I

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NSB8BTHE3_A/I

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURP 100V 8A TO263AB

Seri : Automotive, AEC-Q101

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 100V

Kouran - Mwayèn Rèktifye (Io) : 8A

Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 8A

Vitès : Standard Recovery >500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : -

Kouran - Fèy Reverse @ Vr : 10µA @ 100V

Kapasite @ Vr, F : 55pF @ 4V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pake Aparèy Founisè : TO-263AB

Operating Tanperati - Junction : -55°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NSB8 , NSB8BT

dokiman pou NSB8BTHE3_A/I

Fich : NSB8BTHE3_A/I.pdf

pwodwi ki gen rapò pou NSB8BTHE3_A/I Vishay Semiconductor Diodes Division

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