MBR30H100MFST1G - DIODE SCHOTTKY 100V 30A 5DFN

Fabricant Nimewo Pati

MBR30H100MFST1G

Entèn Nimewo Pati

AX-MBR30H100MFST1G

Fabricant

ON Semiconductor

Kout Deskripsyon

DIODE SCHOTTKY 100V 30A 5DFN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

784830 Pieces

referans pri

~~USD 0.35748~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen MBR30H100MFST1G nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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Espesifikasyon pou MBR30H100MFST1G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : MBR30H100MFST1G

Fabricant : ON Semiconductor

Deskripsyon : DIODE SCHOTTKY 100V 30A 5DFN

Seri : -

Estati Pati : Active

Kalite dyòd : Schottky

Voltage - DC Ranvèse (Vr) (Max) : 100V

Kouran - Mwayèn Rèktifye (Io) : 30A

Voltage - Forward (Vf) (Max) @ Si : 900mV @ 30A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : -

Kouran - Fèy Reverse @ Vr : 100µA @ 100V

Kapasite @ Vr, F : -

Mounting Kalite : Surface Mount

Pake / Ka : 8-PowerTDFN, 5 Leads

Pake Aparèy Founisè : 5-DFN (5x6) (8-SOFL)

Operating Tanperati - Junction : -55°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : MBR30 , MBR30H1

dokiman pou MBR30H100MFST1G

Fich : MBR30H100MFST1G.pdf

pwodwi ki gen rapò pou MBR30H100MFST1G ON Semiconductor

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