FQB6N80TM - MOSFET N-CH 800V 5.8A D2PAK

Fabricant Nimewo Pati

FQB6N80TM

Entèn Nimewo Pati

AX-FQB6N80TM

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 800V 5.8A D2PAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

332250 Pieces

referans pri

~~USD 0.844428~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FQB6N80TM nan stock pou vann.

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Espesifikasyon pou FQB6N80TM

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FQB6N80TM

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 800V 5.8A D2PAK

Seri : QFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 800V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.8A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 1.95 Ohm @ 2.9A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 31nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 1500pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.13W (Ta), 158W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D²PAK (TO-263AB)

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FQB , FQB6

dokiman pou FQB6N80TM

Fich : FQB6N80TM.pdf

pwodwi ki gen rapò pou FQB6N80TM ON Semiconductor

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