UPA2825T1S-E2-AT - MOSFET N-CH 30V 8HVSON

Fabricant Nimewo Pati

UPA2825T1S-E2-AT

Entèn Nimewo Pati

AX-UPA2825T1S-E2-AT

Fabricant

Renesas Electronics America

Kout Deskripsyon

MOSFET N-CH 30V 8HVSON

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

982360 Pieces

referans pri

~~USD 0.2856~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen UPA2825T1S-E2-AT nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou UPA2825T1S-E2-AT

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : UPA2825T1S-E2-AT

Fabricant : Renesas Electronics America

Deskripsyon : MOSFET N-CH 30V 8HVSON

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 24A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 4.6 mOhm @ 24A, 10V

Vgs (th) (Max) @ Id : -

Chaje Gate (Qg) (Max) @ Vgs : 57nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2600pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.5W (Ta), 16.5W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : -

Pake / Ka : 8-PowerWDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : UPA28 , UPA2825T

dokiman pou UPA2825T1S-E2-AT

Fich : UPA2825T1S-E2-AT.pdf

pwodwi ki gen rapò pou UPA2825T1S-E2-AT Renesas Electronics America

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