K4Z80325BC-HC12 - 8 Gb 256M x 32 12.0 Gbps 16K / 32 ms 180FBGA Mass Production

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Entèn Nimewo Pati
Kout Deskripsyon
8 Gb 256M x 32 12.0 Gbps 16K / 32 ms 180FBGA Mass Production
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
122300 Pieces
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen K4Z80325BC-HC12 nan stock pou vann.
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Espesifikasyon pou K4Z80325BC-HC12

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : K4Z80325BC-HC12
Fabricant : Samsung Semiconductor
Deskripsyon : 8 Gb 256M x 32 12.0 Gbps 16K / 32 ms 180FBGA Mass Production
Seri : DDR3
dansite : 8 Gb
Org. : 256M x 32
vitès : 12.0 Gbps
Refresh : 16K / 32 ms
Pake : 180FBGA
pwodwi dènye nouvèl : Mass Production
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : K4Z80 , K4Z8032

dokiman pou K4Z80325BC-HC12

pwodwi ki gen rapò pou K4Z80325BC-HC12 Samsung Semiconductor

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