IRD3CH53DB6 - DIODE GEN PURP 1.2KV 100A DIE

Fabricant Nimewo Pati

IRD3CH53DB6

Entèn Nimewo Pati

AX-IRD3CH53DB6

Fabricant

Infineon Technologies

Kout Deskripsyon

DIODE GEN PURP 1.2KV 100A DIE

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

22960 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRD3CH53DB6 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IRD3CH53DB6

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRD3CH53DB6

Fabricant : Infineon Technologies

Deskripsyon : DIODE GEN PURP 1.2KV 100A DIE

Seri : -

Estati Pati : Obsolete

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 1200V

Kouran - Mwayèn Rèktifye (Io) : 100A

Voltage - Forward (Vf) (Max) @ Si : 2.7V @ 100A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 270ns

Kouran - Fèy Reverse @ Vr : 2µA @ 1200V

Kapasite @ Vr, F : -

Mounting Kalite : Surface Mount

Pake / Ka : Die

Pake Aparèy Founisè : Die

Operating Tanperati - Junction : -40°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRD , IRD3C

dokiman pou IRD3CH53DB6

Fich : IRD3CH53DB6.pdf

pwodwi ki gen rapò pou IRD3CH53DB6 Infineon Technologies

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