ES3J V6G - DIODE GEN PURP 600V 3A DO214AB

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
DIODE GEN PURP 600V 3A DO214AB
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
2460310 Pieces
referans pri
USD 0.114036
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen ES3J V6G nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Posiblite peman:
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Espesifikasyon pou ES3J V6G

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : ES3J V6G
Fabricant : Taiwan Semiconductor Corporation
Deskripsyon : DIODE GEN PURP 600V 3A DO214AB
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : -
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 35ns
Kouran - Fèy Reverse @ Vr : 10µA @ 600V
Kapasite @ Vr, F : 30pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AB, SMC
Pake Aparèy Founisè : DO-214AB (SMC)
Operating Tanperati - Junction : -55°C ~ 150°C
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : ES , ES3J

dokiman pou ES3J V6G

Fich : ES3J V6G.pdf

pwodwi ki gen rapò pou ES3J V6G Taiwan Semiconductor Corporation

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