IRF7807VD1 - MOSFET N-CH 30V 8.3A 8-SOIC

Fabricant Nimewo Pati

IRF7807VD1

Entèn Nimewo Pati

AX-IRF7807VD1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 30V 8.3A 8-SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

65275 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRF7807VD1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IRF7807VD1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRF7807VD1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 30V 8.3A 8-SOIC

Seri : FETKY™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8.3A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V

RD sou (Max) @ Id, Vgs : 25 mOhm @ 7A, 4.5V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 14nC @ 4.5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : -

Karakteristik FET : Schottky Diode (Isolated)

Disipasyon Pouvwa (Max) : 2.5W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-SO

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRF , IRF78

dokiman pou IRF7807VD1

Fich : IRF7807VD1.pdf

pwodwi ki gen rapò pou IRF7807VD1 Infineon Technologies

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