STH315N10F7-6 - MOSFET N-CH 100V 180A H2PAK-6

Fabricant Nimewo Pati

STH315N10F7-6

Entèn Nimewo Pati

AX-STH315N10F7-6

Fabricant

STMicroelectronics

Kout Deskripsyon

MOSFET N-CH 100V 180A H2PAK-6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

131335 Pieces

referans pri

~~USD 2.136204~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen STH315N10F7-6 nan stock pou vann.

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Espesifikasyon pou STH315N10F7-6

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : STH315N10F7-6

Fabricant : STMicroelectronics

Deskripsyon : MOSFET N-CH 100V 180A H2PAK-6

Seri : Automotive, AEC-Q101, DeepGATE™, STripFET™ VII

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 180A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 2.3 mOhm @ 60A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 180nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 12800pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 315W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : H2PAK-6

Pake / Ka : TO-263-7, D²Pak (6 Leads + Tab)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : STH3 , STH315

dokiman pou STH315N10F7-6

Fich : STH315N10F7-6.pdf

pwodwi ki gen rapò pou STH315N10F7-6 STMicroelectronics

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