IPB123N10N3GATMA1 - MOSFET N-CH 100V 58A TO263-3

Fabricant Nimewo Pati

IPB123N10N3GATMA1

Entèn Nimewo Pati

AX-IPB123N10N3GATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 100V 58A TO263-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

522300 Pieces

referans pri

~~USD 0.537162~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IPB123N10N3GATMA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IPB123N10N3GATMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IPB123N10N3GATMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 100V 58A TO263-3

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 58A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V

RD sou (Max) @ Id, Vgs : 12.3 mOhm @ 46A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 46µA

Chaje Gate (Qg) (Max) @ Vgs : 35nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2500pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 94W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D²PAK (TO-263AB)

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IPB12 , IPB123N1

dokiman pou IPB123N10N3GATMA1

Fich : IPB123N10N3GATMA1.pdf

pwodwi ki gen rapò pou IPB123N10N3GATMA1 Infineon Technologies

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