BYM10-800HE3/97 - DIODE GEN PURP 800V 1A DO213AB

Fabricant Nimewo Pati

BYM10-800HE3/97

Entèn Nimewo Pati

AX-BYM10-800HE3/97

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURP 800V 1A DO213AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

3377930 Pieces

referans pri

~~USD 0.083058~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BYM10-800HE3/97 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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Espesifikasyon pou BYM10-800HE3/97

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BYM10-800HE3/97

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURP 800V 1A DO213AB

Seri : SUPERECTIFIER®

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 800V

Kouran - Mwayèn Rèktifye (Io) : 1A

Voltage - Forward (Vf) (Max) @ Si : 1.2V @ 1A

Vitès : Standard Recovery >500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : -

Kouran - Fèy Reverse @ Vr : 10µA @ 800V

Kapasite @ Vr, F : 8pF @ 4V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : DO-213AB, MELF (Glass)

Pake Aparèy Founisè : DO-213AB

Operating Tanperati - Junction : -65°C ~ 175°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BYM10 , BYM10-8

dokiman pou BYM10-800HE3/97

Fich : BYM10-800HE3/97.pdf

pwodwi ki gen rapò pou BYM10-800HE3/97 Vishay Semiconductor Diodes Division

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