TK6A60D(STA4,Q,M) - MOSFET N-CH 600V 6A TO220SIS

Fabricant Nimewo Pati

TK6A60D(STA4,Q,M)

Entèn Nimewo Pati

AX-TK6A60D(STA4,Q,M)

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N-CH 600V 6A TO220SIS

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

281685 Pieces

referans pri

~~USD 0.996~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen TK6A60D(STA4,Q,M) nan stock pou vann.

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Espesifikasyon pou TK6A60D(STA4,Q,M)

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TK6A60D(STA4,Q,M)

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N-CH 600V 6A TO220SIS

Seri : π-MOSVII

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 1.25 Ohm @ 3A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 16nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 800pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 40W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220SIS

Pake / Ka : TO-220-3 Full Pack

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TK6A6 , TK6A60D(

dokiman pou TK6A60D(STA4,Q,M)

Fich : TK6A60D(STA4,Q,M).pdf

pwodwi ki gen rapò pou TK6A60D(STA4,Q,M) Toshiba Semiconductor and Storage

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