IDC08S60CEX1SA3 - DIODE SIC 600V 8A SAWN WAFER
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
DIODE SIC 600V 8A SAWN WAFER
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
23268 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen IDC08S60CEX1SA3 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou IDC08S60CEX1SA3
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
IDC08S60CEX1SA3
Fabricant :
Infineon Technologies
Deskripsyon :
DIODE SIC 600V 8A SAWN WAFER
Seri :
CoolSiC™
Estati Pati :
Obsolete
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
8A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.7V @ 8A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
100µA @ 600V
Kapasite @ Vr, F :
310pF @ 1V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
Die
Pake Aparèy Founisè :
Die
Operating Tanperati - Junction :
-55°C ~ 175°C
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou IDC08S60CEX1SA3
Fich :
IDC08S60CEX1SA3.pdf
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