F1T6GHA1G - DIODE GEN PURP 800V 1A TS-1

Fabricant Nimewo Pati

F1T6GHA1G

Entèn Nimewo Pati

AX-F1T6GHA1G

Fabricant

Taiwan Semiconductor Corporation

Kout Deskripsyon

DIODE GEN PURP 800V 1A TS-1

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

9741810 Pieces

referans pri

~~USD 0.0288~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen F1T6GHA1G nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou F1T6GHA1G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : F1T6GHA1G

Fabricant : Taiwan Semiconductor Corporation

Deskripsyon : DIODE GEN PURP 800V 1A TS-1

Seri : Automotive, AEC-Q101

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 800V

Kouran - Mwayèn Rèktifye (Io) : 1A

Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 1A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 500ns

Kouran - Fèy Reverse @ Vr : 5µA @ 800V

Kapasite @ Vr, F : 15pF @ 4V, 1MHz

Mounting Kalite : Through Hole

Pake / Ka : T-18, Axial

Pake Aparèy Founisè : TS-1

Operating Tanperati - Junction : -55°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : F1T , F1T6

dokiman pou F1T6GHA1G

Fich : F1T6GHA1G.pdf

pwodwi ki gen rapò pou F1T6GHA1G Taiwan Semiconductor Corporation

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