F1T6GHA1G - DIODE GEN PURP 800V 1A TS-1
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-F1T6GHA1G
Fabricant
Kout Deskripsyon
DIODE GEN PURP 800V 1A TS-1
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
9741810 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen F1T6GHA1G nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou F1T6GHA1G
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
F1T6GHA1G
Fabricant :
Taiwan Semiconductor Corporation
Deskripsyon :
DIODE GEN PURP 800V 1A TS-1
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
800V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
500ns
Kouran - Fèy Reverse @ Vr :
5µA @ 800V
Kapasite @ Vr, F :
15pF @ 4V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
T-18, Axial
Pake Aparèy Founisè :
TS-1
Operating Tanperati - Junction :
-55°C ~ 150°C
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou F1T6GHA1G
Fich :
F1T6GHA1G.pdf
pwodwi ki gen rapò pou F1T6GHA1G Taiwan Semiconductor Corporation
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