SI8902EDB-T2-E1 - MOSFET 2N-CH 20V 3.9A 6-MFP

Fabricant Nimewo Pati

SI8902EDB-T2-E1

Entèn Nimewo Pati

AX-SI8902EDB-T2-E1

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET 2N-CH 20V 3.9A 6-MFP

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

517575 Pieces

referans pri

~~USD 0.54207~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI8902EDB-T2-E1 nan stock pou vann.

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Espesifikasyon pou SI8902EDB-T2-E1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI8902EDB-T2-E1

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET 2N-CH 20V 3.9A 6-MFP

Seri : TrenchFET®

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual) Common Drain

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.9A

RD sou (Max) @ Id, Vgs : -

Vgs (th) (Max) @ Id : 1V @ 980µA

Chaje Gate (Qg) (Max) @ Vgs : -

Antre kapasite (Ciss) (Max) @ Vds : -

Pouvwa - Max : 1W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 6-MICRO FOOT®CSP

Pake Aparèy Founisè : 6-Micro Foot™ (2.36x1.56)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI890 , SI8902E

dokiman pou SI8902EDB-T2-E1

Fich : SI8902EDB-T2-E1.pdf

pwodwi ki gen rapò pou SI8902EDB-T2-E1 Vishay Siliconix

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