BSC097N06NSTATMA1 - DIFFERENTIATED MOSFETS

Fabricant Nimewo Pati

BSC097N06NSTATMA1

Entèn Nimewo Pati

AX-BSC097N06NSTATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

DIFFERENTIATED MOSFETS

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1193935 Pieces

referans pri

~~USD 0.23499~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BSC097N06NSTATMA1 nan stock pou vann.

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Espesifikasyon pou BSC097N06NSTATMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BSC097N06NSTATMA1

Fabricant : Infineon Technologies

Deskripsyon : DIFFERENTIATED MOSFETS

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 13A (Ta), 48A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V

RD sou (Max) @ Id, Vgs : 9.7 mOhm @ 40A, 10V

Vgs (th) (Max) @ Id : 3.3V @ 14µA

Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1075pF @ 30V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3W (Ta), 43W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-TDSON-8

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BSC09 , BSC097N0

dokiman pou BSC097N06NSTATMA1

Fich : BSC097N06NSTATMA1.pdf

pwodwi ki gen rapò pou BSC097N06NSTATMA1 Infineon Technologies

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