V10P8HM3_A/H - DIODE SCHOTTKY 80V 10A TO277A

Fabricant Nimewo Pati

V10P8HM3_A/H

Entèn Nimewo Pati

AX-V10P8HM3_A/H

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE SCHOTTKY 80V 10A TO277A

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1217625 Pieces

referans pri

~~USD 0.230418~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen V10P8HM3_A/H nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou V10P8HM3_A/H

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : V10P8HM3_A/H

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE SCHOTTKY 80V 10A TO277A

Seri : Automotive, AEC-Q101, eSMP®, TMBS®

Estati Pati : Active

Kalite dyòd : Schottky

Voltage - DC Ranvèse (Vr) (Max) : 80V

Kouran - Mwayèn Rèktifye (Io) : 10A

Voltage - Forward (Vf) (Max) @ Si : 680mV @ 10A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : -

Kouran - Fèy Reverse @ Vr : 800µA @ 80V

Kapasite @ Vr, F : -

Mounting Kalite : Surface Mount

Pake / Ka : TO-277, 3-PowerDFN

Pake Aparèy Founisè : TO-277A (SMPC)

Operating Tanperati - Junction : -40°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : V10P , V10P8H

dokiman pou V10P8HM3_A/H

Fich : V10P8HM3_A/H.pdf

pwodwi ki gen rapò pou V10P8HM3_A/H Vishay Semiconductor Diodes Division

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