SI1308EDL-T1-GE3 - MOSFET N-CH 30V 1.4A SOT323

Fabricant Nimewo Pati

SI1308EDL-T1-GE3

Entèn Nimewo Pati

AX-SI1308EDL-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 30V 1.4A SOT323

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

3255630 Pieces

referans pri

~~USD 0.086178~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI1308EDL-T1-GE3 nan stock pou vann.

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Espesifikasyon pou SI1308EDL-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI1308EDL-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 30V 1.4A SOT323

Seri : TrenchFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.4A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 10V

RD sou (Max) @ Id, Vgs : 132 mOhm @ 1.4A, 10V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 4.1nC @ 10V

Vgs (Max) : ±12V

Antre kapasite (Ciss) (Max) @ Vds : 105pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 400mW (Ta), 500mW (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SOT-323

Pake / Ka : SC-70, SOT-323

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI130 , SI1308ED

dokiman pou SI1308EDL-T1-GE3

Fich : SI1308EDL-T1-GE3.pdf

pwodwi ki gen rapò pou SI1308EDL-T1-GE3 Vishay Siliconix

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