QJD1210010 - MOSFET 2N-CH 1200V 100A SIC

Fabricant Nimewo Pati

QJD1210010

Entèn Nimewo Pati

AX-QJD1210010

Fabricant

Powerex Inc.

Kout Deskripsyon

MOSFET 2N-CH 1200V 100A SIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

28497 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen QJD1210010 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou QJD1210010

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : QJD1210010

Fabricant : Powerex Inc.

Deskripsyon : MOSFET 2N-CH 1200V 100A SIC

Seri : -

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Silicon Carbide (SiC)

Drenaj nan Voltage Sous (Vdss) : 1200V (1.2kV)

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)

RD sou (Max) @ Id, Vgs : 25 mOhm @ 100A, 20V

Vgs (th) (Max) @ Id : 5V @ 10mA

Chaje Gate (Qg) (Max) @ Vgs : 500nC @ 20V

Antre kapasite (Ciss) (Max) @ Vds : 10200pF @ 800V

Pouvwa - Max : 1080W

Operating Tanperati : -40°C ~ 175°C (TJ)

Mounting Kalite : Chassis Mount

Pake / Ka : Module

Pake Aparèy Founisè : Module

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : QJD , QJD12

dokiman pou QJD1210010

Fich : QJD1210010.pdf

pwodwi ki gen rapò pou QJD1210010 Powerex Inc.

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