SI7170DP-T1-GE3 - MOSFET N-CH 30V 40A PPAK SO-8

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MOSFET N-CH 30V 40A PPAK SO-8
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
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6688 Pieces
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USD 0
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AXE Semiconductor gen SI7170DP-T1-GE3 nan stock pou vann.
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Espesifikasyon pou SI7170DP-T1-GE3

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SI7170DP-T1-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET N-CH 30V 40A PPAK SO-8
Seri : TrenchFET®
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 40A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 3.4 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 2.6V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 100nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4355pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 5W (Ta), 48W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® SO-8
Pake / Ka : PowerPAK® SO-8
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : SI717 , SI7170D

dokiman pou SI7170DP-T1-GE3

pwodwi ki gen rapò pou SI7170DP-T1-GE3 Vishay Siliconix

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