APT1001R1BN - MOSFET N-CH 1000V 10.5A TO247AD

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APT1001R1BN

Entèn Nimewo Pati

AX-APT1001R1BN

Fabricant

Microsemi Corporation

Kout Deskripsyon

MOSFET N-CH 1000V 10.5A TO247AD

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Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

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Espesifikasyon pou APT1001R1BN

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Nimewo pati : APT1001R1BN

Fabricant : Microsemi Corporation

Deskripsyon : MOSFET N-CH 1000V 10.5A TO247AD

Seri : POWER MOS IV®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 1000V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10.5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 1.1 Ohm @ 5.25A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 130nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 2950pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 310W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-247AD

Pake / Ka : TO-247-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : APT , APT10

dokiman pou APT1001R1BN

Fich : APT1001R1BN.pdf

pwodwi ki gen rapò pou APT1001R1BN Microsemi Corporation

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