SI5441DC-T1-GE3 - MOSFET P-CH 20V 3.9A 1206-8

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET P-CH 20V 3.9A 1206-8
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
11560 Pieces
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI5441DC-T1-GE3 nan stock pou vann.
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Espesifikasyon pou SI5441DC-T1-GE3

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SI5441DC-T1-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET P-CH 20V 3.9A 1206-8
Seri : TrenchFET®
Estati Pati : Obsolete
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 55 mOhm @ 3.9A, 4.5V
Vgs (th) (Max) @ Id : 1.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 22nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.3W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 1206-8 ChipFET™
Pake / Ka : 8-SMD, Flat Lead
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : SI544 , SI5441D

dokiman pou SI5441DC-T1-GE3

pwodwi ki gen rapò pou SI5441DC-T1-GE3 Vishay Siliconix

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