IXTA80N10T7 - MOSFET N-CH 100V 80A TO-263-7

Fabricant Nimewo Pati

IXTA80N10T7

Entèn Nimewo Pati

AX-IXTA80N10T7

Fabricant

IXYS

Kout Deskripsyon

MOSFET N-CH 100V 80A TO-263-7

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

9417 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IXTA80N10T7 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IXTA80N10T7

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IXTA80N10T7

Fabricant : IXYS

Deskripsyon : MOSFET N-CH 100V 80A TO-263-7

Seri : TrenchMV™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 14 mOhm @ 25A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 100µA

Chaje Gate (Qg) (Max) @ Vgs : 60nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 3040pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 230W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-263-7 (IXTA..7)

Pake / Ka : TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IXT , IXTA8

dokiman pou IXTA80N10T7

Fich : IXTA80N10T7.pdf

pwodwi ki gen rapò pou IXTA80N10T7 IXYS

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