SQJ912AEP-T1_GE3 - MOSFET 2N-CH 40V 30A PPAK SO-8

Fabricant Nimewo Pati

SQJ912AEP-T1_GE3

Entèn Nimewo Pati

AX-SQJ912AEP-T1_GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET 2N-CH 40V 30A PPAK SO-8

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

763795 Pieces

referans pri

~~USD 0.367326~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SQJ912AEP-T1_GE3 nan stock pou vann.

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Espesifikasyon pou SQJ912AEP-T1_GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SQJ912AEP-T1_GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET 2N-CH 40V 30A PPAK SO-8

Seri : Automotive, AEC-Q101, TrenchFET®

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 40V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A

RD sou (Max) @ Id, Vgs : 9.3 mOhm @ 9.7A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 38nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 1835pF @ 20V

Pouvwa - Max : 48W

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : PowerPAK® SO-8 Dual

Pake Aparèy Founisè : PowerPAK® SO-8 Dual

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SQJ91 , SQJ912AE

dokiman pou SQJ912AEP-T1_GE3

Fich : SQJ912AEP-T1_GE3.pdf

pwodwi ki gen rapò pou SQJ912AEP-T1_GE3 Vishay Siliconix

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