IRFU9N20D - MOSFET N-CH 200V 9.4A I-PAK

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MOSFET N-CH 200V 9.4A I-PAK
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
63395 Pieces
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRFU9N20D nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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Espesifikasyon pou IRFU9N20D

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : IRFU9N20D
Fabricant : Infineon Technologies
Deskripsyon : MOSFET N-CH 200V 9.4A I-PAK
Seri : HEXFET®
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9.4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 380 mOhm @ 5.6A, 10V
Vgs (th) (Max) @ Id : 5.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 27nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 560pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 86W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : IPAK (TO-251)
Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : IRF , IRFU

dokiman pou IRFU9N20D

Fich : IRFU9N20D.pdf

pwodwi ki gen rapò pou IRFU9N20D Infineon Technologies

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