NDD01N60-1G - MOSFET N-CH 600V 1.5A IPAK

Fabricant Nimewo Pati

NDD01N60-1G

Entèn Nimewo Pati

AX-NDD01N60-1G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 600V 1.5A IPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

20488 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

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Espesifikasyon pou NDD01N60-1G

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NDD01N60-1G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 600V 1.5A IPAK

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 8.5 Ohm @ 200mA, 10V

Vgs (th) (Max) @ Id : 3.7V @ 50µA

Chaje Gate (Qg) (Max) @ Vgs : 7.2nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 160pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 46W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : I-PAK

Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NDD , NDD01

dokiman pou NDD01N60-1G

Fich : NDD01N60-1G.pdf

pwodwi ki gen rapò pou NDD01N60-1G ON Semiconductor

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