TSM60NB1R4CH C5G - MOSFET N-CHANNEL 600V 3A TO251

Fabricant Nimewo Pati

TSM60NB1R4CH C5G

Entèn Nimewo Pati

AX-TSM60NB1R4CH C5G

Fabricant

Taiwan Semiconductor Corporation

Kout Deskripsyon

MOSFET N-CHANNEL 600V 3A TO251

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

519555 Pieces

referans pri

~~USD 0.54~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen TSM60NB1R4CH C5G nan stock pou vann.

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Espesifikasyon pou TSM60NB1R4CH C5G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TSM60NB1R4CH C5G

Fabricant : Taiwan Semiconductor Corporation

Deskripsyon : MOSFET N-CHANNEL 600V 3A TO251

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 1.4 Ohm @ 900mA, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 7.12nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 257.3pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 28.4W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-251 (IPAK)

Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TSM60 , TSM60NB1

dokiman pou TSM60NB1R4CH C5G

Fich : TSM60NB1R4CH C5G.pdf

pwodwi ki gen rapò pou TSM60NB1R4CH C5G Taiwan Semiconductor Corporation

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