JAN1N6109US - TVS DIODE 9.9V 19.11V B SQ-MELF

Fabricant Nimewo Pati

JAN1N6109US

Entèn Nimewo Pati

AX-JAN1N6109US

Fabricant

Microsemi Corporation

Kout Deskripsyon

TVS DIODE 9.9V 19.11V B SQ-MELF

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

27314 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen JAN1N6109US nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou JAN1N6109US

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : JAN1N6109US

Fabricant : Microsemi Corporation

Deskripsyon : TVS DIODE 9.9V 19.11V B SQ-MELF

Seri : Military, MIL-PRF-19500/516

Estati Pati : Active

Kalite : Zener

Chanèl Unidirèksyonèl : -

Chanèl bidirèksyonèl yo : 1

Voltage - Ranvèse kanpe (Tip) : 9.9V

Vòltaj - Dekonpozisyon (Min) : 11.73V

Voltage - blocage (Max) @ Ipp : 19.11V

Kouran - Pik batman (10 / 1000µs) : 26.13A

Pouvwa - Peak batman kè : 500W

Pwoteksyon Liy Pouvwa : No

Aplikasyon : General Purpose

Kapasite @ frekans : -

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : SQ-MELF, B

Pake Aparèy Founisè : B, SQ-MELF

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : JAN , JAN1N

dokiman pou JAN1N6109US

Fich : JAN1N6109US.pdf

pwodwi ki gen rapò pou JAN1N6109US Microsemi Corporation

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