PMXB65UPEZ - MOSFET P-CH 12V 3.2A DFN1010D-3G

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET P-CH 12V 3.2A DFN1010D-3G
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
5242225 Pieces
referans pri
USD 0.05352
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen PMXB65UPEZ nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Posiblite peman:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
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Espesifikasyon pou PMXB65UPEZ

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : PMXB65UPEZ
Fabricant : Nexperia USA Inc.
Deskripsyon : MOSFET P-CH 12V 3.2A DFN1010D-3G
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.2V, 4.5V
RD sou (Max) @ Id, Vgs : 72 mOhm @ 3.2A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 12nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 634pF @ 6V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 317mW (Ta), 8.33W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DFN1010D-3
Pake / Ka : 3-XDFN Exposed Pad
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : PMX , PMXB6

dokiman pou PMXB65UPEZ

pwodwi ki gen rapò pou PMXB65UPEZ Nexperia USA Inc.

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