W987D2HBJX6E - IC DRAM 128M PARALLEL 90VFBGA

Fabricant Nimewo Pati

W987D2HBJX6E

Entèn Nimewo Pati

AX-W987D2HBJX6E

Fabricant

Winbond Electronics

Kout Deskripsyon

IC DRAM 128M PARALLEL 90VFBGA

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

214765 Pieces

referans pri

~~USD 1.452474~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen W987D2HBJX6E nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou W987D2HBJX6E

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : W987D2HBJX6E

Fabricant : Winbond Electronics

Deskripsyon : IC DRAM 128M PARALLEL 90VFBGA

Seri : -

Estati Pati : Not For New Designs

Kalite memwa yo : Volatile

Fòma memwa : DRAM

Teknoloji : SDRAM - Mobile LPSDR

Size memwa : 128Mb (4M x 32)

Frè frekans lan : 166MHz

Ekri Sik Tan - Pawòl, Page : 15ns

Tan aksè : 5.4ns

Entèfas memwa : Parallel

Voltage - Pwovizyon pou : 1.7V ~ 1.95V

Operating Tanperati : -25°C ~ 85°C (TC)

Mounting Kalite : Surface Mount

Pake / Ka : 90-TFBGA

Pake Aparèy Founisè : 90-VFBGA (8x13)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : W987 , W987D2

dokiman pou W987D2HBJX6E

Fich : W987D2HBJX6E.pdf

pwodwi ki gen rapò pou W987D2HBJX6E Winbond Electronics

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