FDC655BN - MOSFET N-CH 30V 6.3A SSOT-6

Fabricant Nimewo Pati

FDC655BN

Entèn Nimewo Pati

AX-FDC655BN

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 30V 6.3A SSOT-6

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Plon gratis / RoHS Konfòm

akouchman Tan

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Espesifikasyon pou FDC655BN

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Nimewo pati : FDC655BN

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 30V 6.3A SSOT-6

Seri : PowerTrench®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.3A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 25 mOhm @ 6.3A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 570pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.6W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SuperSOT™-6

Pake / Ka : SOT-23-6 Thin, TSOT-23-6

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FD , FDC6

dokiman pou FDC655BN

Fich : FDC655BN.pdf

pwodwi ki gen rapò pou FDC655BN ON Semiconductor

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