SFAS1008GHMNG - DIODE GEN PURP 600V 10A TO263AB

Fabricant Nimewo Pati

SFAS1008GHMNG

Entèn Nimewo Pati

AX-SFAS1008GHMNG

Fabricant

Taiwan Semiconductor Corporation

Kout Deskripsyon

DIODE GEN PURP 600V 10A TO263AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1113340 Pieces

referans pri

~~USD 0.252~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SFAS1008GHMNG nan stock pou vann.

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Espesifikasyon pou SFAS1008GHMNG

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SFAS1008GHMNG

Fabricant : Taiwan Semiconductor Corporation

Deskripsyon : DIODE GEN PURP 600V 10A TO263AB

Seri : Automotive, AEC-Q101

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 600V

Kouran - Mwayèn Rèktifye (Io) : 10A

Voltage - Forward (Vf) (Max) @ Si : 1.7V @ 10A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 35ns

Kouran - Fèy Reverse @ Vr : 10µA @ 600V

Kapasite @ Vr, F : 60pF @ 4V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pake Aparèy Founisè : TO-263AB (D²PAK)

Operating Tanperati - Junction : -55°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SFAS , SFAS10

dokiman pou SFAS1008GHMNG

Fich : SFAS1008GHMNG.pdf

pwodwi ki gen rapò pou SFAS1008GHMNG Taiwan Semiconductor Corporation

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