FQA6N80_F109 - MOSFET N-CH 800V 6.3A TO-3P

Fabricant Nimewo Pati

FQA6N80_F109

Entèn Nimewo Pati

AX-FQA6N80_F109

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 800V 6.3A TO-3P

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

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6416 Pieces

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Espesifikasyon pou FQA6N80_F109

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FQA6N80_F109

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 800V 6.3A TO-3P

Seri : QFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 800V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.3A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 1.95 Ohm @ 3.15A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 31nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 1500pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 185W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-3P

Pake / Ka : TO-3P-3, SC-65-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FQA6 , FQA6N8

dokiman pou FQA6N80_F109

Fich : FQA6N80_F109.pdf

pwodwi ki gen rapò pou FQA6N80_F109 ON Semiconductor

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