V8P10HM3_A/I - DIODE SCHOTTKY 100V 8A TO277A

Fabricant Nimewo Pati

V8P10HM3_A/I

Entèn Nimewo Pati

AX-V8P10HM3_A/I

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE SCHOTTKY 100V 8A TO277A

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1616220 Pieces

referans pri

~~USD 0.173592~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen V8P10HM3_A/I nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou V8P10HM3_A/I

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : V8P10HM3_A/I

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE SCHOTTKY 100V 8A TO277A

Seri : Automotive, AEC-Q101, eSMP®, TMBS®

Estati Pati : Active

Kalite dyòd : Schottky

Voltage - DC Ranvèse (Vr) (Max) : 100V

Kouran - Mwayèn Rèktifye (Io) : 8A

Voltage - Forward (Vf) (Max) @ Si : 680mV @ 8A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : -

Kouran - Fèy Reverse @ Vr : 70µA @ 100V

Kapasite @ Vr, F : -

Mounting Kalite : Surface Mount

Pake / Ka : TO-277, 3-PowerDFN

Pake Aparèy Founisè : TO-277A (SMPC)

Operating Tanperati - Junction : -40°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : V8P1 , V8P10H

dokiman pou V8P10HM3_A/I

Fich : V8P10HM3_A/I.pdf

pwodwi ki gen rapò pou V8P10HM3_A/I Vishay Semiconductor Diodes Division

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