SIHF30N60E-GE3 - MOSFET N-CH 600V 29A TO220

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 600V 29A TO220
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
68960 Pieces
referans pri
USD 4.068
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SIHF30N60E-GE3 nan stock pou vann.
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Espesifikasyon pou SIHF30N60E-GE3

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SIHF30N60E-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET N-CH 600V 29A TO220
Seri : E
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 29A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 125 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 130nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 2600pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 37W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : -
Pake / Ka : TO-220-3 Full Pack
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : SIHF , SIHF30N

dokiman pou SIHF30N60E-GE3

pwodwi ki gen rapò pou SIHF30N60E-GE3 Vishay Siliconix

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