SM8S33AHE3_A/I - TVS DIODE 33V 53.3V DO218AB

Fabricant Nimewo Pati

SM8S33AHE3_A/I

Entèn Nimewo Pati

AX-SM8S33AHE3_A/I

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

TVS DIODE 33V 53.3V DO218AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

182495 Pieces

referans pri

~~USD 1.537326~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SM8S33AHE3_A/I nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SM8S33AHE3_A/I

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SM8S33AHE3_A/I

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : TVS DIODE 33V 53.3V DO218AB

Seri : Automotive, AEC-Q101, PAR®

Estati Pati : Active

Kalite : Zener

Chanèl Unidirèksyonèl : 1

Chanèl bidirèksyonèl yo : -

Voltage - Ranvèse kanpe (Tip) : 33V

Vòltaj - Dekonpozisyon (Min) : 36.7V

Voltage - blocage (Max) @ Ipp : 53.3V

Kouran - Pik batman (10 / 1000µs) : 124A

Pouvwa - Peak batman kè : 6600W (6.6kW)

Pwoteksyon Liy Pouvwa : No

Aplikasyon : Automotive

Kapasite @ frekans : -

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : DO-218AB

Pake Aparèy Founisè : DO-218AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SM8S , SM8S33A

dokiman pou SM8S33AHE3_A/I

Fich : SM8S33AHE3_A/I.pdf

pwodwi ki gen rapò pou SM8S33AHE3_A/I Vishay Semiconductor Diodes Division

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