SI5511DC-T1-GE3 - MOSFET N/P-CH 30V 4A 1206-8

Fabricant Nimewo Pati

SI5511DC-T1-GE3

Entèn Nimewo Pati

AX-SI5511DC-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N/P-CH 30V 4A 1206-8

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

29071 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI5511DC-T1-GE3 nan stock pou vann.

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Espesifikasyon pou SI5511DC-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI5511DC-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N/P-CH 30V 4A 1206-8

Seri : TrenchFET®

Estati Pati : Obsolete

FET Kalite : N and P-Channel

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A, 3.6A

RD sou (Max) @ Id, Vgs : 55 mOhm @ 4.8A, 4.5V

Vgs (th) (Max) @ Id : 2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 7.1nC @ 5V

Antre kapasite (Ciss) (Max) @ Vds : 435pF @ 15V

Pouvwa - Max : 3.1W, 2.6W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SMD, Flat Lead

Pake Aparèy Founisè : 1206-8 ChipFET™

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI551 , SI5511D

dokiman pou SI5511DC-T1-GE3

Fich : SI5511DC-T1-GE3.pdf

pwodwi ki gen rapò pou SI5511DC-T1-GE3 Vishay Siliconix

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