STB10NK60Z-1 - MOSFET N-CH 600V 10A I2PAK

Fabricant Nimewo Pati

STB10NK60Z-1

Entèn Nimewo Pati

AX-STB10NK60Z-1

Fabricant

STMicroelectronics

Kout Deskripsyon

MOSFET N-CH 600V 10A I2PAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

310225 Pieces

referans pri

~~USD 0.904368~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen STB10NK60Z-1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou STB10NK60Z-1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : STB10NK60Z-1

Fabricant : STMicroelectronics

Deskripsyon : MOSFET N-CH 600V 10A I2PAK

Seri : SuperMESH™

Estati Pati : Not For New Designs

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 750 mOhm @ 4.5A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 70nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 1370pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 115W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : I2PAK

Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : STB1 , STB10N

dokiman pou STB10NK60Z-1

Fich : STB10NK60Z-1.pdf

pwodwi ki gen rapò pou STB10NK60Z-1 STMicroelectronics

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