SI8809EDB-T2-E1 - MOSFET P-CH 20V 1.9A MICROFOOT

Fabricant Nimewo Pati

SI8809EDB-T2-E1

Entèn Nimewo Pati

AX-SI8809EDB-T2-E1

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET P-CH 20V 1.9A MICROFOOT

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

19976 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI8809EDB-T2-E1 nan stock pou vann.

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Espesifikasyon pou SI8809EDB-T2-E1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI8809EDB-T2-E1

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET P-CH 20V 1.9A MICROFOOT

Seri : TrenchFET®

Estati Pati : Obsolete

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : -

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V

RD sou (Max) @ Id, Vgs : 90 mOhm @ 1.5A, 4.5V

Vgs (th) (Max) @ Id : 900mV @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 8V

Vgs (Max) : ±8V

Antre kapasite (Ciss) (Max) @ Vds : -

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 500mW (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 4-Microfoot

Pake / Ka : 4-XFBGA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI880 , SI8809E

dokiman pou SI8809EDB-T2-E1

Fich : SI8809EDB-T2-E1.pdf

pwodwi ki gen rapò pou SI8809EDB-T2-E1 Vishay Siliconix

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