IPI80P04P4L08AKSA1 - MOSFET P-CH TO262-3

Fabricant Nimewo Pati

IPI80P04P4L08AKSA1

Entèn Nimewo Pati

AX-IPI80P04P4L08AKSA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET P-CH TO262-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

52854 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IPI80P04P4L08AKSA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IPI80P04P4L08AKSA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IPI80P04P4L08AKSA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET P-CH TO262-3

Seri : Automotive, AEC-Q101, OptiMOS™

Estati Pati : Obsolete

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 40V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 8.2 mOhm @ 80A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 120µA

Chaje Gate (Qg) (Max) @ Vgs : 92nC @ 10V

Vgs (Max) : +5V, -16V

Antre kapasite (Ciss) (Max) @ Vds : 5430pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 75W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : PG-TO262-3-1

Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IPI80P , IPI80P04P

dokiman pou IPI80P04P4L08AKSA1

Fich : IPI80P04P4L08AKSA1.pdf

pwodwi ki gen rapò pou IPI80P04P4L08AKSA1 Infineon Technologies

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