SI1304BDL-T1-E3 - MOSFET N-CH 30V 0.9A SOT323-3

Fabricant Nimewo Pati

SI1304BDL-T1-E3

Entèn Nimewo Pati

AX-SI1304BDL-T1-E3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 30V 0.9A SOT323-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

4280 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

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Espesifikasyon pou SI1304BDL-T1-E3

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI1304BDL-T1-E3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 30V 0.9A SOT323-3

Seri : TrenchFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 900mA (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V

RD sou (Max) @ Id, Vgs : 270 mOhm @ 900mA, 4.5V

Vgs (th) (Max) @ Id : 1.3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 2.7nC @ 4.5V

Vgs (Max) : ±12V

Antre kapasite (Ciss) (Max) @ Vds : 100pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 340mW (Ta), 370mW (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SC-70-3

Pake / Ka : SC-70, SOT-323

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI130 , SI1304B

dokiman pou SI1304BDL-T1-E3

Fich : SI1304BDL-T1-E3.pdf

pwodwi ki gen rapò pou SI1304BDL-T1-E3 Vishay Siliconix

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