HGTP5N120BND - IGBT 1200V 21A 167W TO220AB

Fabricant Nimewo Pati

HGTP5N120BND

Entèn Nimewo Pati

AX-HGTP5N120BND

Fabricant

ON Semiconductor

Kout Deskripsyon

IGBT 1200V 21A 167W TO220AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

282690 Pieces

referans pri

~~USD 0.992466~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen HGTP5N120BND nan stock pou vann.

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Espesifikasyon pou HGTP5N120BND

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : HGTP5N120BND

Fabricant : ON Semiconductor

Deskripsyon : IGBT 1200V 21A 167W TO220AB

Seri : -

Estati Pati : Not For New Designs

Kalite IGBT : NPT

Voltage - Pèseptè ki emèt deba (Max) : 1200V

Kouran - Pèseptè (Ic) (Max) : 21A

Kouran - Pèseptè batman (Icm) : 40A

Vce (sou) (Max) @ Vge, Ic : 2.7V @ 15V, 5A

Pouvwa - Max : 167W

Oblije chanje enèji : 450µJ (on), 390µJ (off)

Kalite Antre : Standard

Gate chaje : 53nC

Td (on / off) @ 25 ° C : 22ns/160ns

Kondisyon egzamen an : 960V, 5A, 25 Ohm, 15V

Ranvèse Tan Reverse (trr) : 65ns

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake / Ka : TO-220-3

Pake Aparèy Founisè : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : HGTP , HGTP5N

dokiman pou HGTP5N120BND

Fich : HGTP5N120BND.pdf

pwodwi ki gen rapò pou HGTP5N120BND ON Semiconductor

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