NCV5701BDR2G - HIGH CURRENT IGBT GATE DR

Fabricant Nimewo Pati

NCV5701BDR2G

Entèn Nimewo Pati

AX-NCV5701BDR2G

Fabricant

ON Semiconductor

Kout Deskripsyon

HIGH CURRENT IGBT GATE DR

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

523260 Pieces

referans pri

~~USD 0.59616~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen NCV5701BDR2G nan stock pou vann.

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Espesifikasyon pou NCV5701BDR2G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NCV5701BDR2G

Fabricant : ON Semiconductor

Deskripsyon : HIGH CURRENT IGBT GATE DR

Seri : *

Estati Pati : Active

Kondwi konte genyen : -

Kalite Chèn : -

Kantite Chofè yo : -

Kalite Gate : -

Voltage - Pwovizyon pou : -

Vòltaj lojik - VIL, VIH : -

Kouran - Peak Sòti (Sous, Lavabo) : -

Kalite Antre : -

Segondè Voltage Side - Max (Bootstrap) : -

Rise / Fall Time (Tip) : -

Operating Tanperati : -

Mounting Kalite : -

Pake / Ka : -

Pake Aparèy Founisè : -

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NCV5 , NCV570

dokiman pou NCV5701BDR2G

Fich : NCV5701BDR2G.pdf

pwodwi ki gen rapò pou NCV5701BDR2G ON Semiconductor

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